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with ultrafast soft recovery diode auirgr4045d auirgu4045d 1 www.irf.com 02/14/11 =

= features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ? 5s scsoa ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature coefficient. ? ultra fast soft recovery co-pak diode ? tighter distribution of parameters ? lead-free, rohs compliant ? automotive qualified* benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi

parameter max. units v ces collector-to-emitter breakdown voltage v i c @ t c = 25c continuous collector current i c @ t c = 100c continuous collector current i cm pulsed collector current, v ge = 15v i lm clamped inductive load current, v ge = 20v a i f @t c =25c diode continuous forward current i f @t c =100c diode continuous forward current i fm diode maximum forward current continuous gate-to-emitter voltage v transient gate-to-emitter voltage p d @ t c =25 maximum power dissipation w p d @ t c =100 maximum power dissipation t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 1.9 r jc junction-to-case - diode ??? ??? 6.8 r ja junction-to-ambient (pcb mount) ??? ??? 50 r ja junction-to-ambient ??? ??? 110 -55 to + 175 300 (0.063 in. (1.6mm) from case) 20 30 77 39 c/w v ge 600 12 6.0 18 24 8.0 4.0 24 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. * qualification standards can be found at http://www.irf.com/ e g n-channel c gce gate colletor emitter d-pak auirgr4045d i-pak auirgu4045d
auirgr/u4045d 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 15v, l = 1.0mh, r g = 47 ?. pulse width limited by max. junction temperature.

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when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c =100 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.36?v/c v ge = 0v, i c = 250a ( 25 -175 o c ) ?1.72.0 i c = 6.0a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 2.07 ? v i c = 6.0a, v ge = 15v, t j = 150c 5,6,7,9, ?2.14? i c = 6.0a, v ge = 15v, t j = 175c 10 ,11 v ge(th) gate threshold voltage 3.5 ? 6.5 v v ce = v ge , i c = 150a ? v ge ( th ) / ? tj threshold voltage temp. coefficient ? -13 ?mv/c v ce = v ge , i c = 250a ( 25 -175 o c ) gfe forward transconductance ? 5.8 ? s v ce = 25v, i c = 6.0a, pw =80 s i ces ??25a v ge = 0v,v ce = 600v ??250 v ge = 0v, v ce = 600v, t j =175c 8 v fm ?1.602.30 v i f = 6.0a ?1.30? i f = 6.0a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20 v switchin g characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) ? 13 19.5 i c = 6.0a 24 q ge gate-to-emitter charge (turn-on) ? 3.1 4.65 nc v cc = 400v ct1 q gc gate-to-collector charge (turn-on) ? 6.4 9.6 v ge = 15v e on turn-on switching loss ? 56 86 i c = 6.0a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 122 143 j r g = 47 ? , l=1mh, l s = 150nh, t j = 25c ct4 e total total switching loss ? 178 229 energy losses include tail and diode reverse recovery t d(on) turn-on delay time ? 27 35 i c = 6.0a, v cc = 400v t r rise time ? 11 15 ns r g = 47 ? , l=1mh, l s = 150nh ct4 t d(off) turn-off delay time ? 75 93 t j = 25c t f fall time ? 17 22 e on turn-on switching loss ? 140 ? i c = 6.0a, v cc = 400v, v ge = 15v 13,15 e off turn-off switching loss ? 189 ? j r g = 47 ? , l=1mh, l s = 150nh, t j = 175c ct4 e total total switching loss ? 329 ? energy losses include tail and diode reverse recovery wf1,wf2 t d(on) turn-on delay time ? 26 ? i c = 6.0a, v cc = 400v 14,16 t r rise time ? 12 ?ns r g = 47 ? , l=1mh, l s = 150nh ct4 t d(off) turn-off delay time ? 95 ? t j = 175c wf1,wf2 t f fall time ? 32 ? c ies input capacitance ? 350 ? v ge = 0v 23 c oes output capacitance ? 29 ? v cc = 30v c res reverse transfer capacitance ? 10 ? f = 1mhz t j = 175c, i c = 24a 4 rbsoa reverse bias safe operating area full square v cc = 500v, vp =600v ct2 r g = 100 ? , v ge = +20v to 0v v cc = 400v, vp =600v 22 r g = 100 ? , v ge = +15v to 0v ct3, wf4 erec reverse recovery energy of the diode ? 178 ? j t j = 175 o c 17,18,19 trr diode reverse recovery time ? 74 ? ns v cc = 400v, i f = 6.0a 20,21 irr peak reverse recovery current ? 12 ? a v ge = 15v, rg = 47 ? , l=1mh, l s =150nh wf3 s pf ct6 9,10,11,12 conditions ? diode forward voltage drop collector-to-emitter leakage current scsoa short circuit safe operating area 5 ?
auirgr/u4045d www.irf.com 3

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$" qualification information ? moisture sensitivity level d-pak i-pak charged device model class c5 (+/- 1000v) ??? aec-q101-005 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. msl1 rohs compliant yes esd machine model class m2 (+/- 200v) ??? aec-q101-002 human body model class h1a (+/- 500v) ??? aec-q101-001
auirgr/u4045d 4 www.irf.com fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 4 - reverse bias soa t j = 175c, v ge = 20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 3 - forward soa, t c = 25c, t j 175c, v ge = 15v 0 20 40 60 80 100 120 140 160 180 t c (c) 0 10 20 30 40 50 60 70 80 p t o t ( w ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 2 4 6 8 10 12 14 i c ( a ) 10 100 1000 v ce (v) 0 1 10 100 i c a ) 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10sec 100sec tc = 25c tj = 175c single pulse dc 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v
auirgr/u4045d www.irf.com 5 fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80s fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. diode forward characteristics tp = 80s fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s fig. 11 - typical v ce vs. v ge t j = 175c 0.0 1.0 2.0 3.0 v f (v) 0 2 4 6 8 10 12 14 16 18 20 i f ( a ) -40c 25c 175c 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v 4 6 8 10121416 v ge, gate-to-emitter voltage (v) 0 2 4 6 8 10 12 14 16 18 20 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c
auirgr/u4045d 6 www.irf.com fig. 13 - typ. energy loss vs. i c t j = 175c; l = 1mh; v ce = 400v, r g = 47 ? ; v ge = 15v. fig. 15 - typ. energy loss vs. r g t j = 175c; l = 1mh; v ce = 400v, i ce = 6.0a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l=1mh; v ce = 400v r g = 47 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l=1mh; v ce = 400v i ce = 6.0a; v ge = 15v fig. 17 - typical diode i rr vs. i f t j = 175c fig. 18 - typical diode i rr vs. r g t j = 175c; i f = 6.0a 02468101214 i c (a) 50 100 150 200 250 300 350 400 e n e r g y ( j ) e off e on 2 4 6 8 10 12 14 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 rg ( ? ) 60 80 100 120 140 160 180 200 220 e n e r g y ( j ) e off e on 0 25 50 75 100 125 r g ( ? ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 2 4 6 8 10 12 14 i f (a) 0 5 10 15 20 25 30 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 0 25 50 75 100 125 r g ( ?) 6 8 10 12 14 16 18 20 22 i r r ( a )
auirgr/u4045d www.irf.com 7 fig. 20 - typical diode q rr v cc = 400v; v ge = 15v; t j = 175c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 6.0a; t j = 175c fig. 24 - typical gate charge vs. v ge i ce = 6.0a, l=600h fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 22 - typ. v ge vs. short circuit time v cc =400v, t c =25c fig. 21 - typical diode e rr vs. i f t j = 175c 0 100 200 300 400 500 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0 200 400 600 800 1000 1200 di f /dt (a/s) 6 8 10 12 14 16 18 20 i r r ( a ) 2 4 6 8 10 12 14 i f (a) 50 100 150 200 250 300 350 e n e r g y ( j ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 8 1012141618 v ge (v) 0 5 10 15 20 t i m e ( s ) 10 20 30 40 50 c u r r e n t ( a ) t sc i sc 0 2 4 6 8 10 12 14 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 0 500 1000 1500 di f /dt (a/s) 200 400 600 800 1000 1200 q r r ( n c ) 10 ? 22 ? 100 ? 47 ? 6.0a 12a 3.0a
auirgr/u4045d 8 www.irf.com fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0301 0.000004 0.7200 0.000067 0.7005 0.000898 0.4479 0.005416 fig. 26. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.2056 0.000019 1.4132 0.000095 3.3583 0.001204 1.8245 0.009127
auirgr/u4045d www.irf.com 9 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit l rg 80 v dut 480v + - fig.c.t.5 - resistive load circuit fig.c.t.6 - typical filter circuit for v (br)ces measurement
auirgr/u4045d 10 www.irf.com fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 wf.3- typ. diode recovery waveform @ t j = 175c using ct.4 wf.4- typ. short circuit waveform @ t j = 25c using ct.3 0 50 100 150 200 250 300 350 400 450 500 -2-1012345678 time (us) vce (v) -20 -10 0 10 20 30 40 50 60 70 80 v ce i ce -600 -500 -400 -300 -200 -100 0 100 -0.05 0.05 0.15 0.25 time (s) v f (v) -20 -15 -10 -5 0 5 10 15 pea k i rr t rr q rr 10% pea k irr -100 0 100 200 300 400 500 600 -0.2 0 0.2 0.4 0.6 0.8 1 time(s) v ce (v) -2 0 2 4 6 8 10 12 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 4.3 4.5 4.7 time (s) v ce (v) -5 0 5 10 15 20 25 30 test current 90% test current 5% v ce 10% test current tr eon loss
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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
auirgr/u4045d 14 www.irf.com ordering information base p art number packa g e t yp e standard pac k com p lete part number form quantit y auirgr4045d d p ak tube 75 auirgr4045d ta p e and reel 2000 auirgr4045dtr ta p e and reel left 3000 auirgr4045dtrl ta p e and reel ri g ht 3000 auirgr4045dtrr auirgu4045d i p ak tube 75 auirgu4045d
auirgr/u4045d www.irf.com 15
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